摘要:本文采用溶胶凝胶旋转涂膜法，以二水合醋酸锌、乙醇胺、乙二醇甲醚为主要原料，九水硝酸铝为掺杂剂，在玻璃衬底上生长AZO薄膜。运用X射线衍射、紫外可见光透射谱、电学平台等测试手段对薄膜表面形貌、光学性能和电学性能进行了表征。研究了退火温度对薄膜表面形貌、光学性能和电学性能的影响以及H2等离子体处理对薄膜的电学性能的影响。
结果表明：实验最佳工艺参数是溶胶浓度为0.5mol/L，Al掺杂浓度为1%，预处理温度300℃，镀膜层数5层，退火温度550℃，表面电阻为0.4M。制备的AZO薄膜为六方纤锌矿结构，具有明显的c轴择优取向，晶粒尺寸在9~20nm之间，薄膜厚度100nm左右，薄膜平均光透过率超过85%。退火温度越高，越多的Al3+占据Zn2+的位置，薄膜的平均透过率越高，但是截止波长基本相同，禁带宽度逐渐减小。H2等离子体处理能够改善薄膜的电学性能，在经过H2等离子体处理之前，薄膜具有最低的电阻为1.54×107Ω；在经过H2等离子体处理之后，薄膜具有最低的电阻为9.18×103Ω。样品的电阻值的变化跟存放环境有很大的关系。经过等离子体处理的样品的电阻值，经过96小时后，烘箱中的样品的电阻值最大，可能是因为H原子的解吸附引起的。
关键词：退火；AZO薄膜；溶胶凝胶法；性能
Abstract：In this paper，AZO thin films were prepared by sol-gel spin-coating technique on glass substrates，Zn(CH3COO)2·2H2O，H2NCH2CH2OH and CH3OCH2CH2OH were main raw materials，Al(NO3)3·9H2O was the doping agent. The surface topography，optical and electrical properties the AZO thin films were investigated by X-ray diffractometer(XRD)，UV-visible transmission spectra，electrical platform. The effect of annealing temperature on the surface topography，optical and electrical properties，and the effect of H2 plasma treatment on electrical properties were researched by many groups experiment.
The results appeared the optimum technology parameters is sol concentration of 0.5mol/L，Al doping concentration is 1%，and the pretreatment temperature of 300 ℃，coating layer and layer，annealing temperature of 550 ℃，surface resistance of 0.4MΩ. Both the as-deposited and H2 plasma treated AZO films had a hexagonal wurtzite structure. The films showed high preferential c-axis orientation. The films’ grain size was between from 9 to 20 nm，its thickness was about 100nm，and its average optical transmittance of the film is more than 85% in the visible region. The annealing temperature increased，the optical transmittance of thin films also increased，and more Al3+ replaced Zn2+，forbidden band width decreased gradually. H2 plasma treatment can improve the film electrical properties. Before H2 plasma treatment，the film has the lowest resistance for 1.54×107Ω；The change of the resistance with storage environment has the very big relations. After 96 hours，the resistance of the sample is maximum that stored in the dryer after plasma treatment， the reason is the desorption of H atoms，
Key words：Annealing treatment；AZO thin films；Sol-gel technique；Properties
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