铟硅氧化复合薄膜的制备及其性质研究.doc

摘要：实验用射频磁控溅射制备铟硅氧化复合薄膜，分别用分层、共溅方法沉积在载玻片或Si衬底上，然后在不同的温度下退火处理,并分析了薄膜厚度、退火条件对薄膜光学、电学性质的影响。实验使用台阶仪测试薄膜的厚度，四探针测试仪测试薄膜的电阻率，P-N型导电类型鉴别仪分析薄膜的导电类型，X射线衍射仪（XRD）对薄膜进行结构分析，运用紫外-可见光分光计分析其光学性能，实验结果表明，不同退火温度能够改变晶体的结晶以及取向生长。我们发现在不同的温度下都存在晶向为（-201）的In2Si2O7衍射峰，其峰值强度相比较In2O3和SiO2不是很明显。退火并没有改变薄膜的电阻和电阻率。600°C退火条件下，薄膜的光学性质最佳，铟硅薄膜禁带宽度Eg大约在3.00eV-3.40eV之间，光谱分析表明薄膜具有平均90%以上高可见光透射率。退火前后薄膜均不导电，电阻无穷大。

关键词:  铟硅氧化复合薄膜；退火温度；XRD衍射；光学性质；电学性质

Abstract:Experiments were prepared by magnetron sputtering and indium silicon composite film were formed respectively by altogether and layered sputtering in these two way on the glass or Si substrate. Then annealed these films at different temperatures. We analyzed how the different film thickness annealing temperatures effects the optical and electrical properties. Experiments used Surface Profiler to test the films’ thickness, utilized four probe tester measuring the film’s resistivity, PN-type conductivity type detectors to analisis films’ conductivity type , used X-ray diffraction (XRD) to study the microscopic structure and UV-visible spectrometer analysis were used to analyze films’ optical properties. The results show that appropriate different annealing temperatures can change the crystallization state, At these annealing temperature, we find the crystal orientation (-2 0 1) of the In2Si2O7 diffraction peaks , but the diffraction peak intensity is not too obvious, respectively In2O3 and SiO2. Annealing has no effect on films’ resistance and resistivity .The study of film’s optical properties shows that the band gap (Eg) of indium silicon composite film is between in 3.00-3.40eV.The spectrums show that the films have high transmittance in visible light, more than an average of 90%. Before and after annealing, the films is not conductive, their resistance is infinite.

Keywords: indium silicon composite film; Anneal temperatures; X-ray diffraction; optical properties; electrical properties;