氧化铟薄膜的制备和性能研究.doc

摘要：氧化铟(In2O3)是一种宽禁带的N型半导体材料，其室温下直接禁带宽度约为3.65eV，在可见光范围的透明度超过90％，并且单晶氧化铟有着很高的迁移率(160 cm2/V·s)，这使得氧化铟成为制备透明电子器件的重要候选材料之一。

　　　本文通过实验制备了氧化铟薄膜，并对其物理性能进行了研究。实验主要使用磁控溅射的方法制备了铟膜，然后对样品进行热退火形成氧化铟薄膜，分析不同的工艺条件、退火温度、退火时间、薄膜厚度等因素对薄膜光电性能的影响。我们使用DEKTAK150台阶仪测试薄膜的厚度，利用四探针测试仪测试薄膜的电阻率，导电类型鉴定仪分析薄膜的导电类型，利用X射线衍射仪（XRD）研究薄膜的结构性能，运用紫外-可见光分光计分析其光学性能。X射线衍射结果表明制得的氧化铟薄膜均为立方结构的多晶体。光谱分析表明退火时间及退火温度对薄膜透射率的影响较大，氧化铟薄膜的透射率在可见光范围内在80%以上，其禁带宽度为3.61~3.63eV。比较各种退火条件下制备出的样品，得出薄膜在退火时间为25min，退火温度在430℃时制备得到的薄膜性能较好。

关键词：氧化铟，磁控溅射，光电性能，X射线衍射

Abstract:Indium oxide is a direct,wide band gap and N—type semiconductor with good optical and electronic properties.Its band gap is 3.65eV at room temperature,the transmittance of visible light is very high(>90％)as well as the high mobility(~160cm2/V·s of single-crystal),making it an important alternative to fabricate transparent electronic devices.

　　　In this paper,we prepared the indium oxide thin film by experiment, then studied the physical properties.Experiment were prepared using magnetron sputtering of indium film,and then annealed the samples to the formation of indium oxide films.We analyzed of different process conditions, annealing temperature, annealing time,film thickness and other factors affect on the optical and electrical properties of indium oxide films.We used DEKTAK150 Surface Profiler to test the film’s thickness, utilized four probe tester measuring the film’s resistivity, used X-ray diffraction (XRD) to study the microscopic structure,UV-visible spectrometer analysis were used to analyze the film’s optical properties.The X-ray diffraction(XRD) analysis shows that the films are polycrystalline and retain a cubic structure.Spectrum analysis shows that the annealing time and annealing temperature have great influence on the transmittance of the films.The transmittance of visible light of the indium oxide films reaches 80%,and its band pap is from 3.61eV to 3.63eV at room temperature.Compared these samples prepared under different annealing conditions, the annealed condition 25min,430℃ can get the better performance of the films.

Keywords: indium oxide;magnetron sputtering;Optical and electrical characteristics;X-ray diffraction